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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S003K3 датащи(PDF) 63 Page - STMicroelectronics |
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STM8S003K3 датащи(HTML) 63 Page - STMicroelectronics |
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63 / 104 page  DocID018576 Rev 9 63/104 STM8S003F3 STM8S003K3 Electrical characteristics 87 HSE oscillator critical gm formula gmcrit 2 Π × fHSE × ()2 Rm × 2Co C + () 2 = Rm: Notional resistance (see crystal specification) Lm: Notional inductance (see crystal specification) Cm: Notional capacitance (see crystal specification) Co: Shunt capacitance (see crystal specification) CL1=CL2=C: Grounded external capacitance gm >> gmcrit 9.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Table 34. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI Accuracy of HSI oscillator User-trimmed with the CLK_HSITRIMR register for given VDD and TA conditions(1) 1. See the application note. -- 1.0(2) % Accuracy of HSI oscillator (factory calibrated) VDD = 5 V, TA = 25 °C - 5 - VDD = 5 V, -40 °C ≤ TA ≤ 85 °C -5 - 5 tsu(HSI) HSI oscillator wakeup time including calibration - - - 1.0(2) 2. Guaranteed by design. µs IDD(HSI) HSI oscillator power consumption - - 170 250(3) 3. Data based on characterization results. µA |
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