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STM8L151X6 датащи(PDF) 93 Page - STMicroelectronics |
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STM8L151X6 датащи(HTML) 93 Page - STMicroelectronics |
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93 / 146 page ![]() DocID17943 Rev 10 93/146 STM8L151x6/8 STM8L152x6/8 Electrical parameters 123 Figure 24. Typical HSI frequency vs. VDD Low speed internal RC oscillator (LSI) In the following table, data are based on characterization results. 4. Guaranteed by design. Table 34. LSI oscillator characteristics Symbol Parameter Conditions(1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Min. Typ. Max. Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Guaranteed by design. µs D(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 11 % |
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