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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151X4 датащи(PDF) 86 Page - STMicroelectronics |
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STM8L151X4 датащи(HTML) 86 Page - STMicroelectronics |
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86 / 142 page  Electrical parameters STM8L151x4/6, STM8L152x4/6 86/142 DocID15962 Rev 15 Figure 19. Typical HSI frequency vs VDD Low speed internal RC oscillator (LSI) In the following table, data is based on characterization results, not tested in production. Table 34. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency - 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time - - - 200(2) 2. Guaranteed by design. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 - 11 % |
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