VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

VSC7927

SONET/SDH 2.5Gb/s Laser Diode Driver

G52201-0, Rev 3.0

Page 3

04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Table 5: High Speed Inputs and ECL Outputs

Table 6: Power Dissipation

Table 7: Laser Driver DC Electrical Specifications

Table 8: Laser Driver AC Electrical Specifications

Table 9: Package Thermal Specifications

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Single-ended Input Voltage Swing

300

—

1500

mVp-p

Differential Input Common Mode Range

-2.3

—

-1.3

V

ECL Output High Voltage

-1200

——

mV

50

Ω to -2.0V

ECL Output Low Voltage

——

-1600

mV

50

Ω to -2.0V

On-Chip Terminations

35

—

65

Ω

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Power Supply Current (VSS)

——

120

mA

0mA, MK/NMK open circuit

Total Power Dissipation

——

700

mW

MK/NMK terminated 50

Ω to -2V

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Programmable Laser Bias Current

2

—

100

mA

—

Programmable Modulation Current

2

—

100

mA

—

Laser Bias Control Voltage

——

2.1

Laser Modulation Control Voltage

——

2.1

Output Voltage Compliance

—

GND -

3V

—

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Output Rise and Fall Times

——

100

ps

25

Ω load, 20%-80%,

Data to Clock Setup Time

—

50

90

ps

—

Hold Time

20

50

—

ps

—

Symbol

Parameter

Min

Typ

Max

Units

Conditions

θ

JCC

Thermal Resistance from Junction-to-Case

—

25

—

°C/W

Ceramic Package