TM8050H-8D3 datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

TM8050H-8D3

2/9

DocID028948 Rev 3

Characteristics

Table 2: Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180 ° conduction

angle)

TC = 130 °C

IT(AV)

Average on-state current (180 ° conduction

angle)

ITSM

Non repetitive surge peak

on-state current

tp = 8.3 ms

Tj initial = 25 °C

731

tp = 10 ms

670

I2t

I2t value for fusing

Tj = 25 °C

2245

A2s

VRRM /

VDRM

Maximum repetitive symmetric blocking voltage

800

dl/dt

Critical rate of rise of on-state

current

IG = 2 x IGT

, tr ≤ 100 ns

f = 50 Hz

Tj = 25 °C

200

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 150 °C

PG(AV)

Average gate power dissipation

Tj = 150 °C

VRGM

Maximum peak reverse gate voltage

Tstg

Storage junction temperature range

-40 to +150

°C

Maximum operating junction temperature

-40 to +150

°C

Maximum lead temperature during 10 to 30 s duration

245

°C

Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)

Symbol

Test Conditions

Value

Unit

IGT

VD = 12 V, RL

= 33 Ω

Min.

2.5

Max.

VGT

VD = 12 V, RL

= 33 Ω

Max.

1.5

VGD

VD = VDRM, RL

= 3.3 kΩ

Tj = 150 °C

Min.

0.2

IT = 500 mA, gate open

Max.

100

IG = 1.2 x IGT

Max.

125

tgt

IT = 80 A , VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs

Typ.

µs

dV/dt

VD = 67 % VDRM, gate open

Tj = 150 °C

Min.

1000

V/µs

IT = 33 A, dIT/dt = 10 A/µs, VR = 75 V,

VD = 400 V, dVD/dt = 20 V/µs, tP = 100 µs

Tj = 150 °C

Max.

150

µs

VTM

ITM = 160 A, tP = 380 µs

Tj = 25 °C

Max.

1.55

VTO

Threshold voltage

Tj = 150 °C

Max.

0.85

Dynamic resistance

Tj = 150 °C

Max.

5.5

mΩ

IDRM

VD = VDRM = VR = VRRM = 800 V

Tj = 25 °C

Max.

µA

IRRM

Tj = 150 °C

Max.

2.5

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