STU7NF25 datasheet(4/12 Pages) STMICROELECTRONICS

номер детали	STU7NF25

подробное описание детали	Switching applications

PDF	12 Pages

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Electrical characteristics

STU7NF25

4/12

DocID025041 Rev 1

Electrical characteristics

CASE

=25 °C unless otherwise specified).

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage

= 1 mA, V

= 0

250

DSS

Zero gate voltage drain

current (V

= 0)

= 250 V

= 250 V, T

=125 °C

μA

GSS

Gate body leakage current

= 0)

= ±20 V

100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA2

DS(on)

Static drain-source

on-resistance

= 10 V, I

= 4 A

0.29

0.42

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

=25 V, f=1 MHz, V

500

oss

Output capacitance

rss

Reverse transfer

capacitance

-15

Total gate charge

= 200 V, I

= 8 A

=10 V

(see

Figure 14)

-16

Gate-source charge

3.5

Gate-drain charge

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

=125 V, I

=4 A,

=4.7

Ω, V

=10 V

(see

Figure 13 and

Figure 18)

-13

Rise time

d(off)

Turn-off delay time

Fall time

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