STS15N4LLF5 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STS15N4LLF5

4/12

Doc ID 17339 Rev 1

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS =max rating @125°C

100

µA

IGSS

Gate body leakage

Current (VDS = 0)

VGS = ±16 V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 7.5 A

VGS= 4.5 V, ID= 7.5 A

0.00625

0.0076

0.0067

0.0083

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS= 0

1570

257

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 18 A

VGS = 4.5 V

(see Figure 14)

12.9

3.9

5.3

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-1.5

Ω

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

Rise time

VDD = 15 V, ID = 9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16)

td(off)

Turn-off delay time

Fall time

5.2

Obsolete

Product(s)

- Obsolete

Product(s)

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