STPSC20H065CWY datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Characteristics

STPSC20H065C-Y

2/9

DocID026619 Rev 2

Characteristics

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.115 x IF

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 135 °C

(1), DC, per diode

Tc = 125 °C

(2), DC, per device

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

470

IFRM

Repetitive peak forward

current

Tc = 135 °C

(1), T

j = 175 °C, δ = 0.1

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature(3)

-40 to +175

°C

Value based on Rth(j-c) max (per diode)

Value based on Rth(j-c) max (per device)

condition to avoid thermal runaway for a diode on its own heatsink

dP tot

dTj

---------------

Rth j

–

()

--------------------------

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case per diode

Per diode

TO-247

1.25

1.5

°C/W

TO-220AB

Total

TO-247

0.83

0.95

TO-220AB

Rth(c)

Coupling

0.4

Table 4. Static electrical characteristics per diode

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-9

100

µA

Tj = 150 °C

425

(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-1.56

1.75

Tj = 150 °C

1.98

2.5

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

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