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STPSC8H065CT датащи(PDF) 1 Page - STMicroelectronics

номер детали STPSC8H065CT
подробное описание детали  High forward surge capability
PDF  8 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC8H065CT датащи(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
November 2013
DocID024808 Rev 2
1/8
STPSC8H065C
650 V power Schottky silicon carbide diode
Datasheet
- production data
Features
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 High forward surge capability
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimized
capacitive charge at turn-off behavior is
independent of temperature.
Especially suited for use in interleaved or bridge-
less topologies, this dual-diode rectifier will boost
the performance in hard switching conditions. Its
high forward surge capability ensures a good
robustness during transient phases.
A1
K
A2
A1
A2
K
TO-220AB
STPSC8H065CT
Table 1. Device summary
Symbol
Value
IF(AV)
2 x 4 A
VRRM
650 V
Tj (max)
175 °C
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