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STPS80H100C датащи(PDF) 3 Page - STMicroelectronics

номер детали STPS80H100C
подробное описание детали  Low leakage current
PDF  7 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STPS80H100C датащи(HTML) 3 Page - STMicroelectronics

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STPS80H100C
Characteristics
Doc ID 6727 Rev 3
3/7
Figure 1.
Average forward power dissipation
versus average forward current
(per diode)
Figure 2.
Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
IF(av) (A)
PF(av)(W)
T
δ=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
50
Tamb(°C)
IF(av)(A)
Rth(j-a)=5°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T
tp
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
P(tp)
P
(1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
P(T )
P
(25 °C)
ARM
j
ARM
T (°C)
j
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
1E-3
1E-2
1E-1
1E+0
0
100
200
300
400
500
t(s)
IM(A)
Tc=50°C
Tc=75°C
Tc=110°C
IM
t
δ=0.5
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
T
δ=tp/T
tp



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