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TLP320 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLP320 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page ![]() TLP320,TLP320-2,TLP320-4 2002-09-25 2 Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP320 TLP320 -2 TLP320 -4 Unit Forward current IF ±150 mA Forward current derating ∆IF /°C -1.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP ±1 (100µs pulse, 100pps) A Junction temperature Tj 125 °C Collector -emitter voltage VCEO 55 V Emitter -collector voltage VECO 7 V Collector current IC 80 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit, Ta ≥ 25°C) ∆PC / °C -1.5 -1.0 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 250 200 mW Total package power dissipation derating (Ta≥25°C) ∆PT / °C -2.5 2.0 mW / °C Isolation voltage (Note 1) BVS 5000 (AC, 1min., R.H. ≤ 60%) Vrms (Note 1) Device consider a two terminal: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 20 120 mA Collector current IC ― 1 10 mA Operating temperature Topr -25 ― 85 °C |
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