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TLP320 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP320
подробное описание детали  TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
PDF  7 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP320 датащи(HTML) 2 Page - Toshiba Semiconductor

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TLP320,TLP320-2,TLP320-4
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
TLP320
TLP320
-2
TLP320
-4
Unit
Forward current
IF
±150
mA
Forward current derating
∆IF /°C
-1.5 (Ta ≥ 25°C)
mA / °C
Pulse forward current
IFP
±1 (100µs pulse, 100pps)
A
Junction temperature
Tj
125
°C
Collector
-emitter voltage
VCEO
55
V
Emitter
-collector voltage
VECO
7
V
Collector current
IC
80
mA
Collector power dissipation
(1 circuit)
PC
150
100
mW
Collector power dissipation
derating (1 circuit, Ta ≥ 25°C)
∆PC / °C
-1.5
-1.0
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
PT
250
200
mW
Total package power dissipation
derating (Ta≥25°C)
∆PT / °C
-2.5
2.0
mW / °C
Isolation voltage
(Note 1)
BVS
5000 (AC, 1min., R.H. ≤ 60%)
Vrms
(Note 1)
Device consider a two terminal: LED side pins shorted together and detector
side pins shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
5
24
V
Forward current
IF
20
120
mA
Collector current
IC
1
10
mA
Operating temperature
Topr
-25
85
°C



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