STL260N3LLH6 datasheet(1/15 Pages) STMICROELECTRONICS

номер детали	STL260N3LLH6

подробное описание детали	Very low gate charge

PDF	15 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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This is information on a product in full production.

November 2014

DocID026659 Rev 2

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STL260N3LLH6

N-channel 30 V, 0.0011

Ω typ., 260 A STripFET™ H6

Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• Very low on-resistance RDS(on)

• Very low gate charge

• High avalanche ruggedness

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ H6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

1

2

3

4

PowerFLAT™5x6

Order code

VDS

RDS(on) max

ID

STL260N3LLH6

30 V

0.0013

Ω

260 A (1)

1.

The value is rated according Rthj-c

Table 1. Device summary

Order code

Marking

Package

Packaging

STL260N3LLH6

260N3LLH6

PowerFLAT™ 5x6

Tape and reel

www.st.com

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STL260N3LLH6 датащи(PDF) 1 Page - STMicroelectronics

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Аналогичный номер детали - STL260N3LLH6

Аналогичное описание - STL260N3LLH6

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