STL31N65M5 datasheet(3/17 Pages) STMICROELECTRONICS

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STL31N65M5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

VGS

Gate-source voltage

± 25

(1)

The value is rated according to Rthj-case and limited by package.

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

(3)

When mounted on FR-4 board of inch², 2oz Cu.

Drain current (continuous) at Tamb = 25 °C

2.8

(3)

Drain current (continuous) at Tamb = 100 °C

1.8

PTOT

(3)

Total dissipation at Tamb = 25 °C

2.8

PTOT

(1)

Total dissipation at TC = 25 °C

125

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

410

dv/dt (4)

ISD ≤ 15 A, di/dt ≤ 400 A/µs, VDD = 400 V, VDS(peak) < V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

°C/W

Rthj-amb

(1)

When mounted on FR-4 board of inch², 2oz Cu.

Thermal resistance junction-ambient max

°C/W

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