STL8P4LLF6

Electrical characteristics

DocID025617 Rev 2

5/14

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on voltage

-

1.1

V

Reverse recovery time

di/dt = 100 A/µs,

(see Figure 15: "Test

circuit for inductive load

switching and diode

recovery times")

-

26

ns

Reverse recovery

charge

-

21

nC

Reverse recovery

current

-

1.7

A

Notes:

(1)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%

For the P-channel Power MOSFET, current polarity of voltages and current have

to be reversed.