L6491 datasheet(12/24 Pages) STMICROELECTRONICS

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Electrical characteristics

L6491

12/24

DocID024832 Rev 1

Driving buffer section

Iso

8, 13

High/low-side source peak

current

LVG/HVG ON

TJ = 25 °C

3.5

Full temperature range

2.5

Isi

High/low-side sink peak

current

LVG/HVG OFF

TJ = 25 °C

3.5

Full temperature range

2.5

Logic inputs

Vil

1, 2, 3

Low level logic threshold

0.95

1.45

Vih

High level logic threshold

voltage

22.5

VSSD

SmartSD unlatch threshold

0.8

Vil_S

1, 3

Single input voltage

LIN and HIN connected

together and floating

0.8

IHINh

HIN logic “1” input bias

current

HIN = 15 V

120

200

260

A

IHINl

HIN logic “0” input bias

current

HIN = 0 V

A

ILINl

LIN logic “0” input bias

current

LIN = 0 V

A

ILINh

LIN logic “1” input bias

current

LIN = 15 V

A

ISDh

SD logic “1” input bias

current

SD = 15 V

A

ISDl

SD logic “0” input bias

current

SD = 0 V

A

1. VBO = Vboot - Vout.

2. RDS(on) is tested in the following way:

RDS(on) = [(VCC - VBOOT1) - (VCC - VBOOT2)] / [I1(VCC, VBOOT1) - I2(VCC, VBOOT2)] where I1 is pin 14 current when

VBOOT = VBOOT1, I2 when VBOOT = VBOOT2.

Table 8. DC operation electrical characteristics

(VCC = 15 V; PGND = SGND; TJ = + 25 °C) (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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