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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TA2012N датащи(PDF) 13 Page - Toshiba Semiconductor |
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TA2012N датащи(HTML) 13 Page - Toshiba Semiconductor |
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13 / 21 page  TA8132AN / AF , TA2012N / F 2002-10-30 13 Characteristic Symbol Test Cir - cuit Test Condition Min. Typ. Max. Unit Input resistance RIN 1 ― ― 25 ― Output resistance ROUT 1 ― ― 5 ― kΩ Max. composite signal input voltage Vin MAX (stereo) 1 L + R = 90%, P = 10% THD = 3%, SW9→LPF: ON ― 350 ― mVrms fm = 100kHz ― 42 ― fm = 1kHz 35 42 ― Separation Sep ― L + R = 135mVrms P = 15mVrms, SW9→LPF: ON fm = 10kHz ― 42 ― dB Monaural THD (monaural) Vin = 150 mVrms (mono) ― 0.2 ― Total harmonic distortion Stereo THD (stereo) 1 L + R = 135mVrms, P = 15mVrms SW9→LPF: ON ― 0.2 ― % Voltage gain GV (MPX) 1 Vin = 150mVrms (mono) -5 -3 -1 dB Channel balance C.B. 1 Vin = 150mVrms (mono) -2 0 2 dB ON VL (ON) ― 8 15 Stereo LED sensitivity OFF VL (OFF) 1 Pilot input 2 6 ― mVrms Stereo LED hysteresis VH 1 To LED turn off from LED turn on ― 2 ― mVrms Capture range C.R. 1 P = 15mVrms ― ±1.3 ― % MP X Signal to noise ratio S / N 1 Vin = 150mVrms (mono) ― 78 ― dB |
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