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STGW80H65DFB датащи(PDF) 17 Page - STMicroelectronics |
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STGW80H65DFB датащи(HTML) 17 Page - STMicroelectronics |
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17 / 18 page ![]() STGW80H65DFB, STGWT80H65DFB Revision history DocID024366 Rev 8 17/18 5 Revision history Table 10: Document revision history Date Revision Changes 12-Mar-2013 1 First release. 18-Sep-2013 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves) 20-Nov-2013 3 Added device in Max247. Modified Table 1 accordingly. Updated Section 4: Package information. Minor text changes in cover page. 24-Jan-2014 4 Updated title and description in cover page. Updated Table 6: IGBT switching characteristics (inductive load), Table 7: Diode switching characteristics (inductive load), Figure 9: Forward bias safe operating area andFigure 14: Switching energy vs. temperature. 13-Jun-2014 5 Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation vs. case temperature, Figure 18: Switching times vs. collector current, Figure 19: Switching times vs. gateresistance and Figure 24: Capacitance variations. Added Figure 25: Collector current vs. switching frequency. Updated Section 4: Package information. Minor text changes. 07-May-2015 6 Added TO-247 long leads package information. 21-Sep-2016 7 Updated Figure 2: "Output characteristics (TJ= 25 °C) ", Figure 3: "Output characteristics (TJ= 175 °C) ", Figure 4: "Transfer characteristics ", Figure 7: "VCE(sat) vs. junction temperature" and Figure 8: "VCE (sat) vs. collector current". The part number STGY80H65DFB has been moved to a separate datasheet. Minor text changes. 17-Nov-2016 8 Updated Table 2: "Absolute maximum ratings" and Figure 9: "Forward bias safe operating area". The part number STGWA80H65DFB has been moved to a separate datasheet. Updated document accordingly. |
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