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STGW35NC60WD датащи(PDF) 5 Page - STMicroelectronics

номер детали STGW35NC60WD
подробное описание детали  40 A, 600 V ultra fast IGBT
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW35NC60WD датащи(HTML) 5 Page - STMicroelectronics

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STGW35NC60WD
Electrical characteristics
5/14
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
(see Figure 17)
29.5
12
1640
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
TC = 125 °C (see Figure 17)
29
13.5
1600
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 20 A,
RGE = 10 Ω, VGE = 15 V
(see Figure 17)
19.5
118
27
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 20 A,
RGE = 10 Ω, VGE =15 V,
TC = 125 °C
(see Figure 17)
46
151
38
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Eon
(1)
Eoff
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in
Figure 19. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C). Eon include diode recovery energy.
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
(see Figure 19)
305
181
486
µJ
µJ
µJ
Eon
(1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 20 A
RG = 10 Ω, VGE = 15 V,
TC = 125°C (see Figure 19)
455
355
810
µJ
µJ
µJ



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