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STGWA25S120DF3 датащи(PDF) 4 Page - STMicroelectronics

номер детали STGWA25S120DF3
подробное описание детали  Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGWA25S120DF3 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGW25S120DF3, STGWA25S120DF3
4/18
DocID026374 Rev 2
2
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
IC = 2 mA
1200
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 25 A
1.6
2.1
V
VGE = 15 V, IC = 25 A,
TJ =125 °C
1.8
VGE = 15 V, IC = 25 A
TJ = 175 °C
1.9
VF
Forward on-voltage
IF = 25 A
2.95
4.1
V
IF = 25 A TJ = 125 °C
2.25
V
IF = 25 A TJ = 175 °C
1.9
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
5
6
7
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 1200 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE =0
-1600
-
pF
Coes
Output capacitance
-
125
-
pF
Cres
Reverse transfer
capacitance
-61
-
pF
Qg
Total gate charge
VCC = 960 V, IC =25 A,
VGE = 15 V, see Figure 30
-80
-
nC
Qge
Gate-emitter charge
-
11
-
nC
Qgc
Gate-collector charge
-
44
-
nC



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