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STGWT20H60DF датащи(PDF) 1 Page - STMicroelectronics

номер детали STGWT20H60DF
подробное описание детали  600 V, 20 A high speed trench gate field-stop IGBT
PDF  17 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWT20H60DF датащи(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
June 2013
DocID024745 Rev 1
1/17
17
STGW20H60DF,
STGWT20H60DF
600 V, 20 A
high speed
trench gate field-stop IGBT
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
Applications
• Motor control
• UPS, PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V
CE(sat)
temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
TO-247
TO-3P
1
2
3
1
2
3
TAB
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STGW20H60DF
GW20H60DF
TO-247
Tube
STGWT20H60DF
GWT20H60DF
TO-3P
Tube
www.st.com


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