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STGWA15M120DF3 датащи(PDF) 4 Page - STMicroelectronics

номер детали STGWA15M120DF3
подробное описание детали  Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGWA15M120DF3 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGW15M120DF3, STGWA15M120DF3
4/19
DocID026222 Rev 2
2
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter
breakdown voltage
(VGE = 0)
IC = 2 mA
1200
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 15 A
1.85
2.3
V
VGE = 15 V, IC = 15 A,
TJ = 125 °C
2.1
VGE = 15 V, IC = 15 A
TJ = 175 °C
2.2
VF
Forward on-voltage
IF = 15 A
2.7
3.8
V
IF = 15 A TJ = 125 °C
2.05
V
IF = 15 A TJ = 175 °C
1.75
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 500 µA
5
6
7
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 1200 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
-985
-
pF
Coes
Output capacitance
-
118
-
pF
Cres
Reverse transfer
capacitance
-38
-
pF
Qg
Total gate charge
VCC = 960 V, IC =15 A,
VGE = 15 V, see Figure 30
-53
-
nC
Qge
Gate-emitter charge
-
8
-
nC
Qgc
Gate-collector charge
-
32
-
nC



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