STGIPQ8C60T-HZ datasheet(11/25 Pages) STMICROELECTRONICS

номер детали	STGIPQ8C60T-HZ

подробное описание детали	SLLIMM™nano - 2nd series IPM, 3-phase inverter, 8 A, 600 V short-circuit rugged IGBTs

PDF	25 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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11 / 25 page

DocID028908 Rev 3

11/25

STGIPQ8C60T-HZ

Electrical characteristics

SVR

Supply voltage rejection

ratio

vs. Vcc

CMRR

Common mode rejection

ratio

The direction of the input current is out of the IC.

Table 13. Sense comparator characteristics

Symbol

Parameter

Test condition

Min

Typ

Max Unit

Iib

Input bias current

VCin=1V

µA

Vod

Open drain low level output

voltage

Iod=3mA

0.5

RON_OD

Open drain low level output

resistance

Iod=3mA

166

Ω

RPD_SD SD pull down resistor

(1)

Equivalent value as a result of the resistances of three drivers in parallel

125

Ω

td_comp Comparator delay

VT/SD/OD pulled to 5V through

100 k

Ω resistor

-90

130

Slew rate

CL=180pF; Rpu=5 kΩ

-60

V/µs

tsd

Shutdown to high/low side

driver propagation delay

VOUT =0V, Vboot = VCC, VIN=0 to

3.3V

125

200

tisd

Comparator triggering to

high/low side driver turn-off

propagation delay

Measured applying a voltage

step from 0V to 3.3V to pin of CIN

200

250

Table 14. Truth table

Condition

Logic input (Vl)Output

T/SD/OD

LIN

HIN

LVG

HVG

Shutdown enable half-bridge tri-state

X(1)

X = don’t care

X(1)

Interlocking half-bridge tri-state

0 “logic state”

half-bridge tri-state

1 “logic state”

Low side direct driving

1 “logic state”

high side direct driving

Table 12. Op-amp characteristics (continued)

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

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