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STGP30H60DFB датащи(PDF) 1 Page - STMicroelectronics

номер детали STGP30H60DFB
подробное описание детали  Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
PDF  21 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30H60DFB датащи(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
October 2015
DocID026677 Rev 2
1/21
21
STGB30H60DFB,
STGP30H60DFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGB30H60DFB
GB30H60DFB
D2PAK
Tape and reel
STGP30H60DFB
GP30H60DFB
TO-220
Tube
www.st.com


Аналогичный номер детали - STGP30H60DFB

производительномер деталидатащиподробное описание детали
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1Mb / 24P		 600 V, 30 A high speed trench gate field-stop IGBT
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Аналогичное описание - STGP30H60DFB

производительномер деталидатащиподробное описание детали
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