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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STGWT20V60DF датащи(PDF) 1 Page - STMicroelectronics |
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STGWT20V60DF датащи(HTML) 1 Page - STMicroelectronics |
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1 / 23 page  This is information on a product in full production. June 2013 DocID024360 Rev 3 1/23 23 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: T J = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: V CE(sat) = 1.8 V (typ.) @ I C = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode • Lead free package Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. TO-247 TO-3P TO-220 D²PAK 1 2 3 TAB 1 2 3 1 2 3 TAB 1 3 TAB Table 1. Device summary Order code Marking Package Packaging STGB20V60DF GB20V60DF D²PAK Tape and reel STGP20V60DF GP20V60DF TO-220 Tube STGW20V60DF GW20V60DF TO-247 Tube STGWT20V60DF GWT20V60DF TO-3P Tube www.st.com |
Аналогичный номер детали - STGWT20V60DF |
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Аналогичное описание - STGWT20V60DF |
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