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STGF15H60DF датащи(PDF) 3 Page - STMicroelectronics

номер детали STGF15H60DF
подробное описание детали  Trench gate field-stop IGBT, H series 600 V, 15 A high speed
PDF  23 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF15H60DF датащи(HTML) 3 Page - STMicroelectronics

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DocID025113 Rev 2
3/23
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical ratings
23
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
TO-220
D²PAK
TO-220FP
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
30
30(1)
1. Limited by maximum junction temperature.
A
Continuous collector current at TC = 100 °C
15
15(1)
A
ICP
(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current
60
60(1)
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current TC = 25 °C
30
30(1)
A
Continuous forward current at TC = 100 °C
15
15(1)
IFP
(2)
Pulsed forward current
60
60(1)
A
PTOT
Total dissipation at TC = 25 °C
115
30
W
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature
- 55 to 175
Table 3. Thermal data
Symbol
Parameter
TO-220
D²PAK
TO-220FP
Unit
RthJC
Thermal resistance junction-case IGBT
1.3
5
°C/W
RthJC
Thermal resistance junction-case diode
2.78
6.25
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W



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