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L99DZ120 датащи(PDF) 41 Page - STMicroelectronics |
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L99DZ120 датащи(HTML) 41 Page - STMicroelectronics |
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41 / 162 page ![]() DocID029145 Rev 4 41/162 L99DZ120 Electrical specifications 161 3.4.14 H-bridge driver The voltages are referred to power ground and currents are assumed positive, when the current flows into the pin. 6 V ≤ VS ≤ 28 V; 6 V ≤ VSREG ≤ 28 V; Tj = -40°C to 150 °C, unless otherwise specified. |IOLD7| Under-current threshold HS in low on-resistance mode VS/VSREG = 13.5 V; V1 = 5 V; source 15 40 60 mA Under-current threshold HS in high on-resistance mode 510 15 mA |IOLD8| Under-current threshold HS in low on-resistance mode 10 30 45 mA Under-current threshold HS in high on-resistance mode 510 15 mA IOLD9|, |IOLD13|, |IOLD14| Under-current threshold HS in high current mode 612 mA Under-current threshold HS in low current mode 0.5 4 mA |IOLD10| Under -current threshold HS in high current mode 10 30 mA Under -current threshold HS in low current mode 0.3 4 mA |IOLD11|, |IOLD12|, |IOLD15|, |IOLD_HS| Under -current threshold HS in high current mode 612 mA Under -current threshold HS in low current mode 0.85 4 mA tOL_out Filter time of open-load signal Duration of open-load condition to set the status bit 150 200 250 µs Table 19. Current monitoring (continued) Symbol Parameter Test condition Min. Typ. Max. Unit Table 20. H-bridge driver Symbol Parameter Test condition Min. Typ. Max. Unit Drivers for external high-side PowerMOS IGHx(Ch) Average charge current (charge stage) Tj = 25 °C 0.3 A RGHx On-resistance (discharge- stage) VSHx = 0 V; IGHx = 50 mA; Tj = 25 °C 610 14 Ω VSHx = 0 V; IGHx = 50 mA; Tj = 130 °C 14 20 Ω VGHHx Gate-on voltage VS = SH = 6 V; ICP = 15 mA VSHx + 6 V VS = SH = 12 V; ICP = 15 mA VSHx + 8 VSHx + 10 VSHx + 11.5 V |
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