AP7175SP-13 datasheet(3/14 Pages) DIODES

3 / 14 page

AP7175

Document number: DS35606 Rev. 4 - 3

3 of 14

www.diodes.com

January 2017

AP7175

NOT RECOMMENDED FOR NEW DESIGN -

NO ALTERNATE PART

Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Rating

Unit

VIN

VIN Supply Voltage (VIN to GND)

-0.3 to +4.0

VCNTL

VCNTL Supply Voltage (VCNTL to GND)

-0.3 to +7.0

VOUT

VOUT to GND Voltage

-0.3 to VIN +0.3

—

PG to GND Voltage

-0.3 to +7.0

—

EN, FB to GND Voltage

-0.3 to VCNTL +0.3

Power Dissipation (SO-8EP)

1.7

Power Dissipation (MSOP-8EP)

1.5

Maximum Junction Temperature

+150

°C

TSTG

Storage Temperature

-65 to +150

°C

TSDR

Maximum Lead Soldering Temperature, 10 Seconds

+260

°C

Note:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Min

Max

Unit

VCNTL

VCNTL Supply Voltage

3.0

5.5

VIN

VIN Supply Voltage

1.2

3.65

VOUT

VOUT Output Voltage (when VCNTL-VOUT >1.9V)

0.8

VIN - VDROP

IOUT

VOUT Output Current

Continuous Current

Peak Current

COUT

VOUT Output Capacitance

IOUT = 3A at 25% nominal VOUT

1100

µF

IOUT = 2A at 25% nominal VOUT

1700

IOUT = 1A at 25% nominal VOUT

2400

ESRCOUT

ESR of VOUT Output Capacitor

200

mΩ

Ambient Temperature

-40

+85

°C

Junction Temperature

-40

+125

°C

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