STP7N80K5 datasheet(3/21 Pages) STMICROELECTRONICS

номер детали	STP7N80K5

подробное описание детали	Zener-protected

PDF	21 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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DocID023448 Rev 5

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STD7N80K5, STP7N80K5, STU7N80K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

3.8

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

110

IAR

Max current during repetitive or single

pulse avalanche

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

dv/dt (2)

ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

Operating junction temperature

-55 to 150

°C

Tstg

Storage temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220

IPAK

Rthj-case

Thermal resistance junction-case max

1.14

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

100

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-pcb max

°C/W

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