RN1221 datasheet(2/8 Pages) TOSHIBA

номер детали	RN1221

подробное описание детали	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

PDF	8 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 8 page

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

2001-06-07

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICBO

―

VCB = 50V, IE = 0

―

100

Collector cut-off current

RN1221~1227

ICEO

―

VCE = 50V, IB = 0

―

500

RN1221

―

3.85

―

7.14

RN1222

―

1.75

―

3.25

RN1223

―

0.82

―

1.52

RN1224

―

VEB = 10V, IC = 0

0.38

―

0.71

RN1225

―

0.365

―

0.682

RN1226

―

VEB = 5V, IC = 0

0.35

―

0.65

Emitter cut-off current

RN1227

IEBO

―

VEB = 6V, IC = 0

0.378

―

0.703

RN1221

―

RN1222

―

RN1223

―

RN1224

―

RN1225

―

RN1226

―

DC current gain

RN1227

hFE

―

VCE = 5V, IC = 100mA

―

RN1221

IC = 50mA, IB = 2mA

Collector-emitter

saturation voltage

RN1222~1227

VCE (sat)

―

IC = 50mA, IB = 1mA

―

0.25

RN1221

―

1.0

―

3.5

RN1222

―

1.4

―

4.5

RN1223

―

2.0

―

6.5

RN1224

―

3.0

―

12.0

RN1225

―

0.6

―

2.0

RN1226

―

0.7

―

2.5

Input voltage (ON)

RN1227

VI (ON)

―

VCE = 0.2V, IC = 100mA

1.0

―

3.0

RN1221~1224

―

0.8

―

1.3

RM1225, 1226

―

0.4

―

0.8

Input voltage (OFF)

RN1227

VI (OFF)

―

VCE = 5V, IC = 0.1mA

0.5

―

1.0

Translation frequency

RN1221~1227

―

VCE = 5V, IC = 20mA

―

300

―

MHz

Collector output

capacitance

RN1221~1227

Cob

―

VCB = 10V, IE = 0,

f = 1MHz

―

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