STF7N105K5

Electrical ratings

DocID026184 Rev 2

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate- source voltage

± 30

V

4(1)

A

3(1)

A

IDM(2)

Drain current (pulsed)

16

A

25

W

Max. current during repetitive or single pulse avalanche

1.5

A

Single pulse avalanche energy

132

mJ

Insulation withstand voltage (RMS) from all three leads to external

2500

V

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

V/ns

Operating junction temperature range

- 55 to 150

°C

Storage temperature range

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

5

°C/W

Thermal resistance junction-amb max

62.5

°C/W