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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STP16N50M2 датащи(PDF) 5 Page - STMicroelectronics |
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STP16N50M2 датащи(HTML) 5 Page - STMicroelectronics |
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5 / 21 page  STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics DocID026641 Rev 5 5/21 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 13 A ISDM(1) Source-drain current (pulsed) - 52 A VSD (2) Forward on voltage VGS = 0 V, ISD = 13 A - 1.6 V trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 280 ns Qrr Reverse recovery charge - 2.85 µC IRRM Reverse recovery current - 20.5 A trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 388 ns Qrr Reverse recovery charge - 4.5 µC IRRM Reverse recovery current - 21 A Notes: (1)Pulse width is limited by safe operating area. (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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