STD12N65M2 datasheet(1/16 Pages) STMICROELECTRONICS

номер детали	STD12N65M2

подробное описание детали	Extremely low gate charge

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производитель	STMICROELECTRONICS [STMicroelectronics]

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February 2015

DocID027317 Rev 2

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This is information on a product in full production.

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STD12N65M2

N-

channel 650 V, 0.42 Ω typ., 8 A MDmesh M2

Power MOSFET in a DPAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)max.

ID

STD12N65M2

650 V

0.5 Ω

8 A



Extremely low gate charge



Excellent output capacitance (COSS) profile



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STD12N65M2

12N65M2

DPAK

Tape and

reel

DPAK (TO-252)

Аналогичный номер детали - STD12N65M2

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD12N65M5	1Mb / 23P	N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK 22-Jun-2011
Inchange Semiconductor ...	STD12N65M5	308Kb / 2P	isc N-Channel Mosfet Transistor

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Аналогичное описание - STD12N65M2

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	STL7N60M2	310Kb / 13P	Extremely low gate charge 26-Jan-2015
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	STW56N65M2	730Kb / 12P	Extremely low gate charge December 2014 Rev 1

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STD12N65M2 датащи(PDF) 1 Page - STMicroelectronics

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Аналогичный номер детали - STD12N65M2

Аналогичное описание - STD12N65M2

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