DocID026321 Rev 3

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STD2N105K5, STP2N105K5, STU2N105K5

Electrical characteristics

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The built-in back-to-back Zener diodes have specifically been designed to enhance the

device's ESD capability. In this respect the Zener voltage is appropriate to achieve an

efficient and cost-effective intervention to protect the device's integrity. These integrated

Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay time

(see Figure 17)

-

14.5

-

ns

Rise time

-

8.5

-

ns

Turn-off-delay time

-

35

-

ns

Fall time

-

38.5

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Source-drain current

-

1.5

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

6

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

(see Figure 19)

-

326

ns

Reverse recovery charge

-

1.19

µC

Reverse recovery current

-

7.3

A

Reverse recovery time

(see Figure 19)

-

525

ns

Reverse recovery charge

-

1.83

µC

Reverse recovery current

-

7

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

30

-

-

V