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STF28NM60ND датащи(PDF) 5 Page - STMicroelectronics

номер детали STF28NM60ND
подробное описание детали  N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
PDF  22 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF28NM60ND датащи(HTML) 5 Page - STMicroelectronics

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STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
23
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
92
A
V
SD
(2)
2.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Forward on voltage
I
SD
= 23 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 23 A, V
DD
= 60 V
di/dt=100 A/μs
(see Figure 17)
-
170
ns
Q
rr
Reverse recovery charge
-
1160
nC
I
RRM
Reverse recovery current
-
14
A
t
rr
Reverse recovery time
I
SD
= 23 A,V
DD
= 60 V
di/dt=100 A/μs,
T
J
= 150 °C
(see Figure 17)
-
237
ns
Q
rr
Reverse recovery charge
-
2090
nC
I
RRM
Reverse recovery current
-
18
A



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