STW10N95K5 datasheet(3/22 Pages) STMICROELECTRONICS

3 / 22 page

DocID024850 Rev 3

3/22

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

D2PAK,

TO-220, TO-247

Gate- source voltage

±30

Drain current (continuous) at T

= 25 °C

(1)

Limited by maximum junction temperature.

Drain current (continuous) at T

= 100 °C

(1)

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

TOT

Total dissipation at T

= 25 °C

130

Max current during repetitive or single

pulse avalanche

2.5

Single pulse avalanche energy

(starting T

= 25 °C, I

, V

= 50 V)

122

dv/dt

(3)

≤ 8 A, di/dt ≤ 100 A/μs, V

DS(peak) ≤

(BR)DSS.

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(4)

SD ≤

760 V

MOSFET dv/dt ruggedness

V/ns

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s; T

=25 °C)

2500

stg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

D2PAK

TO-220,

TO-247

thj-case

Thermal resistance junction-case max

4.2

0.96

°C/W

thj-amb

Thermal resistance junction-amb max

62.5

°C/W

hj-pcb

(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

Thermal resistance junction-pcb max

°C/W

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