| поискавой системы для электроныых деталей |
|
STD6N60M2 датащи(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STD6N60M2 датащи(HTML) 5 Page - STMicroelectronics |
|
5 / 21 page ![]() DocID024772 Rev 3 5/21 STB6N60M2, STD6N60M2 Electrical characteristics 21 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 4.5 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 18 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 4.5 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 17) - 274 ns Qrr Reverse recovery charge - 1.47 µC IRRM Reverse recovery current - 10.7 A trr Reverse recovery time ISD = 4.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 17) - 376 ns Qrr Reverse recovery charge - 1.96 µC IRRM Reverse recovery current - 10.5 A |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |