FERD60M45C datasheet(3/7 Pages) STMICROELECTRONICS

номер детали	FERD60M45C

подробное описание детали	Stable leakage current over reverse voltage

PDF	7 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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DocID024892 Rev 1

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FERD60M45C

Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average forward current versus

ambient temperature (

 = 0.5, per diode)

PF(AV) (W)

d=tp/T

d = 1

d = 0.5

d = 0.2

d = 0.1

d = 0.05

IF(AV) (A)

100

125

150

175

Rth(j-a)=Rth(j-c)

Tamb (°C)

d=tp/T

Figure 3. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 4. Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp (s)

IR (mA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Tj=125°C

Tj=25°C

VR (V)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 6. Forward voltage drop versus forward

current (typical values, per diode)

C (pF)

100

1000

10000

100

F=1MHz

Vosc=30mVRMS

Tj=25°C

VR (V)

IF (A)

0.1

1.0

10.0

100.0

0.00

0.10

0.20

0.30

0.40

0.50

0.60

0.70

0.80

Tj=25°C

Tj=125°C

VF (V)

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