DocID024889 Rev 1

3/10

FERD40M45C

Characteristics

10

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average forward current versus

ambient temperature (

0

2

4

6

8

10

12

14

16

0

5

10

15

20

25

30

d = 1

d = 0.5

d = 0.2

d = 0.1

d = 0.05

T

tp

PF(AV) (W)

IF(AV) (A)

0

5

10

15

20

25

0

25

50

75

100

125

150

175

T

tp

IF(AV) (A)

Tamb (°C)

Figure 3. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 4. Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp (s)

Zth(j-c)/Rth(j-c)

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

35

40

45

IR (mA)

VR (V)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 6. Forward voltage drop versus forward

current (typical values, per diode)

C (pF)

100

1000

10000

1

10

100

F=1MHz

VR (V)

0.1

1.0

10.0

100.0

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65

IF (A)

VF (V)