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ACST1035-8FP датащи(PDF) 2 Page - STMicroelectronics

номер детали ACST1035-8FP
подробное описание детали  Triac with self overvoltage protection
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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ACST1035-8FP датащи(HTML) 2 Page - STMicroelectronics

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Characteristics
ACST1035-8FP
2/13
DocID025321 Rev 2
1
Characteristics
Table 2: Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
Tc = 108 °C
10
A
ITSM
Non repetitive surge
peak on-state current
tp =16.7 ms
Tj initial = 25 °C
95
A
tp = 20 ms
90
I2t
I2t value for fusing
(full cycle sine wave)
tp = 10 ms
54
A2s
VRRM /
VDRM
Repetitive peak off-state voltage
Tj = 150 °C
800
V
dl/dt
Critical rate of rise of
on-state current
IG = 2 x IGT,
tr ≤ 100 ns
f = 120 Hz, Tj = 150 ° C
100
A/µs
Vpp(1)
Non repetitive peak pulse line voltage
Tj initial = 25 °C
2
kV
(dl/dt)BO
Non repetitive critical current rate of
rise at breakover
Tj initial = 25 °C
150
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 150 °C
1
A
PGM
Peak gate power
10
V
PG(AV)
Average gate power dissipation
Tj = 150 °C
0.1
W
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Maximum operating junction temperature range
-40 to +150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
Vins
Insulation RMS voltage (60 seconds)
2000
V
Notes:
(1)According to test described by IEC 61000-4-5 standard and test Fig 19.



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