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STTH15S12 датащи(PDF) 4 Page - STMicroelectronics

номер детали STTH15S12
подробное описание детали  Low reverse current
PDF  10 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH15S12 датащи(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH15S12
4/10
DocID026656 Rev 1
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
Figure 8. Reverse recovery softness factor
versus dIF/dt (typical values)
0
400
800
1200
1600
2000
0
50
100
150
200
250
300
350
400
450
500
QRR(nC)
I
F = I F(AV)
V
R = 600 V
T
j = 125 °C
dIF/dt(A/µs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
50
100
150
200
250
300
350
400
450
500
SFACTOR
I
F = I F(AV)
V
R = 600 V
T
j = 125 °C
dIF/dt(A/µs)
Figure 9. Relative variations of dynamic
parameters versus junction temperature
Figure 10. Junction capacitance versus reverse
voltage applied (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
I
RM
S
FACTOR
Q
RR
I
F = I F(AV)
V
R = 600 V
Reference: T
j = 125 °C
Tj(°C)
C(pF)
1
10
100
1
10
100
1000
10000
F = 1 MHz
V
OSC = 30 mVRMS
T
j = 25 °C
V
R (V)



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