NVJS3151P datasheet(1/5 Pages) ONSEMI

номер детали	NVJS3151P

подробное описание детали	Trench Power MOSFET

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June, 2016 − Rev. 4

1

Publication Order Number:

NTJS3151/D

NTJS3151P, NVJS3151P

Trench Power MOSFET

12 V, 3.3 A, Single P−Channel,

ESD Protected SC−88

Features

• Leading Trench Technology for Low RDS(ON) Extending Battery Life

• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)

• Gate Diodes for ESD Protection

• NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Units

Drain−to−Source Voltage

VDSS

−12

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25 °C

ID

−2.7

A

TA = 85 °C

−2.0

t

≤ 5 s

TA = 25 °C

−3.3

Power Dissipation

(Note 1)

Steady

State

TA = 25 °C

PD

0.625

W

Pulsed Drain Current

tp = 10 ms

IDM

−8.0

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode)

IS

−0.8

A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol

Max

Units

Junction−to−Ambient – Steady State

RqJA

200

°C/W

Junction−to−Ambient − t

≤ 5 s

RqJA

141

Junction−to−Lead – Steady State

RqJL

102

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

SC−88/SOT−363

CASE 419B

STYLE 28

MARKING DIAGRAM &

PIN ASSIGNMENT

www.onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

XXX M

G

1

6

1

XXX

= Device Code

M

= Date Code

G

= Pb−Free Package

DD

S

DD

G

(Note: Microdot may be in either location)

V(BR)DSS

RDS(on) Typ

ID Max

−12 V

45 m

W @ −4.5 V

67 m

W @ −2.5 V

133 m

W @ −1.8 V

−3.3 A

Top View

SC−88 (SOT−363)

D

S

D

6

5

4

1

2

3

G

S

D

G

3 k

W

Аналогичный номер детали - NVJS3151P

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ON Semiconductor	NVJS4151P	121Kb / 5P	Single P?묬hannel Trench Power MOSFET August, 2014 ??Rev. 1
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