© Semiconductor Components Industries, LLC, 2014

August, 2014 − Rev. 3

1

Publication Order Number:

NTJS4151P/D

NTJS4151P

Trench Power MOSFET

−20 V, −4.2 A, Single P−Channel, SC−88

Features

Utilization, Same as SC−70−6

Applications

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

−20

V

Gate−to−Source Voltage

±12

V

Continuous Drain

Current (Note 1)

Steady

State

−3.3

A

−2.4

t ≤ 5 s

−4.2

Power Dissipation

(Note 1)

Steady

State

1.0

W

Pulsed Drain Current

−10

A

Operating Junction and Storage Temperature

−55 to

150

Source Current (Body Diode)

−1.3

A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

ESD

Human Body Model (HBM)

ESD

4000

V

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State

125

°C/W

Junction−to−Ambient − t ≤ 5 s

75

Junction−to−Lead – Steady State

45

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Top View

http://onsemi.com

SC−88 (SOT−363)

D

D

S

D

D

6

5

4

1

2

3

47 mW @ −4.5 V

70 mW @ −2.5 V

180 mW @ −1.8 V

−4.2 A

G

−20 V

SC−88/SOT−363

CASE 419B

MARKING DIAGRAM &

PIN ASSIGNMENT

TY M G

G

1

6

1

TY

= Device Code

M

= Date Code

G

= Pb−Free Package

DD

S

DD

G

(Note: Microdot may be in either location)

See detailed ordering and shipping information ion page 4 of

this data sheet.

ORDERING INFORMATION