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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRKU/V91 датащи(PDF) 3 Page - International Rectifier |
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IRKU/V91 датащи(HTML) 3 Page - International Rectifier |
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3 / 9 page  IRKU/V71, 91 Series 3 Bulletin I27135 rev. F 10/02 www.irf.com I RRM Max. peak reverse and I DRM off-state leakage current at VRRM, VDRM 2500 (1 min) 50 Hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt Max. critical rate of rise T J = 125oC, linear to 0.67 V DRM , of off-state voltage (5) gate open circuit T J Junction operating temperature range Tstg Storage temper. range - 40 to 125 R thJC Max. internal thermal resistance, junction 0.165 0.135 Per module, DC operation to case R thCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink busbar 3 wt Approximate weight 110 (4) gr (oz) Case style TO-240AA JEDEC 15 mA T J = 125 oC, gate open circuit Thermal and Mechanical Specifications Parameters IRK.71 IRK.91 Units Conditions - 40 to 125 0.1 5 Triggering (5) Available with dv/dt = 1000V/ µs, to complete code add S90 i.e. IRKU91/16AS90. A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound °C K/W Nm Mounting surface flat, smooth and greased V INS RMS isolation voltage V P GM Max. peak gate power 12 12 P G(AV) Max. average gate power 3.0 3.0 I GM Max. peak gate current 3.0 3.0 A -V GM Max. peak negative gate voltage 4.0 TJ = - 40°C 2.5 TJ = 25°C 1.7 TJ = 125°C 270 TJ = - 40°C 150 mA TJ = 25°C 80 TJ = 125°C V GD Max. gate voltage that will not trigger I GD Max. gate current that will not trigger Parameters IRKU/V71 IRKU/V91 Units Conditions 0.25 V 6mA Anode supply = 6V resistive load V GT Max. gate voltage required to trigger Anode supply = 6V resistive load I GT Max. gate current required to trigger W V 10 T J = 125oC, rated V DRM applied T J = 125oC, rated V DRM applied 500 V/ µs Parameters IRKU/V71,91 Units Conditions Blocking Sine half wave conduction Rect. wave conduction Devices Units 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRKU/V71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18 IRKU/V91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) |
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