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MM58174 датащи(PDF) 2 Page - National Semiconductor (TI) |
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MM58174 датащи(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Voltage at All Inputs and Outputs VDD a 03 to VSS b 03 Operating Temperature MM58174AN b 40 Cto a85 C Storage Temperature b 65 Cto a150 C VDD–VSS 65V Lead Temperature (Soldering 10 seconds) 300 C Electrical Characteristics TA eb40 Cto a85 C VSS e 0V Symbol Parameter Conditions Min Typ Max Units VDD Supply Voltage Standby Mode 22 55 V (no READ or WRITE Instructions) Operational Mode 45 55 V IDD Supply Current VDD e 22V (Standby) 10 m A VDD e 5V (Operating) 1 mA Input Logic Levels VDD e 5V for Signals AD0 – AD3 DB0 – DB3 WR RD CS Logic ‘‘1’’ 2 V Logic ‘‘0’’ 08 V Input Capacitance 10 pF Input Current Levels VDD e 5V Current to VSS for Signals AD0 – AD3 DB0 – DB3 RD VIN e VDD 30 m A Internal Resistor to VDD for Signals WR 30 100 kX CS 30 100 kX Output Logic Levels VDD e 5V for Signals DB0 – DB3 Logic ‘‘1’’ IOH eb01 mA 24 V Logic ‘‘0’’ IOL e 16 mA 04 V INTERRUPT (Open Drain) Logic ‘‘0’’ For IDS e 16 mA 04 V Off Leakage VOUT e 5V 5 m A 2 |
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