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MMBTH10 датащи(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

номер детали MMBTH10
подробное описание детали  Silicon Epitaxial Planar Transistor
PDF  4 Pages
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производитель  BILIN [Galaxy Semi-Conductor Holdings Limited]
домашняя страница  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

MMBTH10 датащи(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Silicon Epitaxial Planar Transistor
MMBTH10
C125
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
3
V
Collector cut-off current
ICBO
VCB=25V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=2V,IC=0
0.1
μA
DC current gain
hFE
VCE=10V,IC=4.0mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=4.0mA, IB= 0.4mA
0.5
V
Base-emitter on voltage
VBE(on)
IC=4.0mA, VCE=10V
0.95
V
Transition frequency
fT
VCE=10V, IC= 4.0mA
f=100MHz
650
MHz
Collector-Base Capacitance
Ccb
VCB=10V,IE=0,f=1.0MHz
0.7
pF
Collector-Base Feedback Capacitance Crb
VCB=10V,IE=0,f=1.0MHz 0.35
0.65
pF
Collector Base Time Constant
rb'CC
IC=4mA,VCB=10V
f=31.8MHz
9.0
pS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified



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