HFP730F datasheet(3/9 Pages) SEMIHOW

номер детали	HFP730F

подробное описание детали	400V N-Channel MOSFET

PDF	9 Pages

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

G, Total Gate Charge [nC]

Note : I

D = 6 A

DS = 80V

DS = 200V

DS = 320V

-1

200

400

600

800

1000

1200

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

0.1

GS, Gate-Source Voltage [V]

-55

Notes :

1. V

DS= 30V

2. 300us Pulse Test

150

010

DS, Drain-Source Voltage [V]

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :

1. 300us Pulse Test

2. T

C = 25

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

SD, Source-Drain Voltage [V]

Notes :

1. V

GS= 0V

2. 300us Pulse Test

150

048

D, Drain Current[A]

GS = 10V

GS = 20V

Note : T

J = 25

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