AM29LV256M datasheet(67/70 Pages) AMD

67 / 70 page

September 15, 2003

Am29LV256M

D A T A SH EET

REVISION SUMMARY

Revision A (August 3, 2001)

Initial release as abbreviated Advance Information

data sheet.

Revision A+1 (September 12, 2001)

Ordering Information

Changed package part number designation from WH

to PC.

Physical Dimensions

Added the TS056 and LAA064 packages.

Revision A+2 (October 3, 2001)

Global

Corrected title from 64 Mbit to 256 Mbit. Added 120 ns

speed option.

Distinctive Characteristics

SecSi

TM (Secured Silicon) Sector region: Corrected

64-byte to 256-byte.

Connection Diagram

Modified Fortified BGA ball grid to an 8 x 8 ball matrix.

Changed RFU (reserved for future use) balls to NC

(No Connection).

Ordering Information

Changed operating voltage range on 90 ns speed op-

tion to 3.0–3.6 V.

Pin Description

Added A-1 description.

Revision A+3 (March 25, 2002)

Distinctive Characteristics

Clarified description of Enhanced VersatileIO control.

Physical Dimensions

Added drawing that shows both TS056 and TSR056

specifications.

Revision B (July 1, 2002)

Expanded data sheet to full specification version.

Revision B+1 (July 10, 2002)

Ordering Information, Physical Dimensions

Corrected package description to LAC064, 18 x 12

mm Fortified BGA.

DC Characteristics table

Deleted I

ACC specification.

Revision B+2 (September 9, 2002)

Product Selector Guide, Ordering Information,

Read-Only Operations, Erase and Program

Operations, and Alternate CE# Controlled Erase

and Program Operations

Added regulated OPNs.

Changed all OPNs that end with 4 or 9 to end with 3 or

Changed all package markings that contain combina-

tions that end with 4 or 9 to end with 3 or 8.

CFI

Modified wording of last paragraph to read: “reading

array data.”

Program Suspend/Program Resume Command

Sequence

Changed 15 µs typical to maximum and added 5 µs

typical.

Erase Suspend/Erase Resume Commands

Changed typical from 20 µs to 5 µs and added a maxi-

mum of 20 µs.

LAC064—64-Ball Fortified Ball Grid Array

Added final package drawing.

Revision B+3 (October 23, 2002)

SecSi (Secured Silicon) Sector Flash

Memory Region

Added x8 address range.

Physical Dimensions

Modified drawing to show the actual number of balls

on device package.

Revision B+4 (November 6, 2002)

Global

Removed the Enhanced VI/O option and changed it to

VI/O only.

Product Selector Guide

Removed the 98R, 108, 108R, 118, 118R, 128, and

128R Speed Options.

Modified Note #2.

Moved V

IO from far left side of the block diagram and

moved it to Input/Output Buffers.

Ordering Information

Modified Order numbers and package markings to re-

flect the removal of speed options.

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