© Semiconductor Components Industries, LLC, 2015

January, 2015 − Rev. 3

1

Publication Order Number:

NTP2955/D

NTP2955

Power MOSFET

−60 V, −12 A, Single P−Channel, TO−220

Features

Applications

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

−60

V

Gate−to−Source Voltage

±20

V

Continuous Drain

Current (Note 1)

Steady

State

−12

A

−9.0

Power Dissipation

(Note 1)

62.5

W

Continuous Drain

Current (Note 1)

Steady

State

−2.4

A

−1.8

Power Dissipation

(Note 1)

2.4

W

Pulsed Drain Current

−42

A

Operating Junction and Storage Temperature

−55 to

175

°C

Source Current (Body Diode)

−12

A

Single Pulse Drain−to−Source Avalanche

EAS

216

mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Case

2.4

°C/W

Junction−to−Ambient − Steady State (Note 1)

62.5

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1 in pad size

(Cu. area = 1.127 in sq [1 oz] including traces).

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

D

S

G

P−Channel

−60 V

156 m

W @ −10 V

−12 A

Device

Package

Shipping

ORDERING INFORMATION

TO−220

CASE 221A

STYLE 5

1

2

3

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

NTP2955G

TO−220

(Pb−Free)

50 Units / Rail

www.onsemi.com

NT2955G

AYWW

DS

D

G

1

MARKING DIAGRAM &

PIN ASSIGNMENT