TSDF1920W datasheet(2/4 Pages) VISHAY

2 / 4 page

TSDF1920W

Vishay Semiconductors

www.vishay.com

2 (4)

Rev. 2, 02–May–02

Document Number 85092

Electrical DC Characteristics

Tamb = 25°C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector cut-off current

VCE = 5 V, VBE = 0

ICES

100

µA

Collector-base cut-off current

VCB = 5 V, IE = 0

ICBO

100

Emitter-base cut-off current

VEB = 1 V, IC = 0

IEBO

µA

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

3.5

Collector-emitter saturation voltage

IC = 30 mA, IB = 3 mA

VCEsat

0.1

0.25

DC forward current transfer ratio

VCE = 2 V, IC = 20 mA

hFE

100

150

Electrical AC Characteristics

Tamb = 25°C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Transition frequency

VCE = 2 V, IC = 25 mA, f = 1 GHz

GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz

Ccb

0.15

0.3

Collector-emitter capacitance VCE = 2 V, f = 1 MHz

Cce

0.4

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.6

Noise figure

VCE = 2 V, IC = 5 mA,

ZS = ZSopt, ZL = ZLopt, f = 2 GHz

1.2

Power gain,

maximum stable gain

VCE = 2 V, IC = 25 mA,

ZS = ZSopt, ZL = ZLopt, f = 2 GHz

Gpe = Gms *)

Transducer gain

VCE = 2 V, IC = 25 mA,

ZS = ZL= 50 Ω, f = 2 GHz

| S21e | 2

13.5

16.4

Third order intercept point

at output

VCE = 2 V, IC = 25 mA,

ZS = ZL= 50 Ω, f = 2 GHz

IP3

dBm

1 dB compression point

VCE = 2 V, IC = 25 mA,

ZS = ZL= 50 Ω, f = 2 GHz

P–1dB

dBm

*) Gms = | S21e/S12e |

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