TPD1024S datasheet(3/8 Pages) TOSHIBA

номер детали	TPD1024S

подробное описание детали	TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

PDF	8 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 8 page

TPD1024S

2002-10-24

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDS (DC)

Output current

1.5

Input voltage

VGS

−0.5 ~ 6

Ta = 25°C

Power dissipation

Tc = 25°C

Operating temperature

Topr

−40 ~ 85

°C

Junction temperature

150

°C

Storage temperature

Tstg

−55 ~ 150

°C

Recommendable Condition

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Input voltage

VIN

―

4.5

Electrical Characteristics (Tj = 25°C)

Characteristic

Symbol

Test

Cir-

cuit

Test Condition

Min

Typ.

Max

Unit

Drain-source breakdown voltage

V(BR) DSS

―

VGS = 0, ID = 10 mA

―

Operating supply voltage

VDD (OPR)

―

IDSS (1)

―

VGS = 0, VDS = 40 V

―

Current at output off

IDSS (2)

―

VGS = 0, VDS = 24 V

―

100

µA

Input threshold voltage

Vth

―

VDS = 10 V, ID = 1 mA

0.8

―

2.5

Input current

IGSS

―

VGS = 5 V,

at normal operation

―

300

µA

On resistance

RDS (ON)

―

VGS = 5 V, ID = 1 A

―

0.5

Ω

Thermal shutdown temperature

―

160

―

°C

Overcurrent protection

―

VDS = 12 V, VGS = 5 V

―

3.5

―

tON

―

µs

Switching time

tOFF

VDS = 12 V, VGS = 5 V,

RL = 12 Ω

―

µs

Diode forward voltage

Between drain and source

VDSF

―

IF = 1.5 A

―

0.9

1.8

Avalanche energy

―

L = 10 mH, Single pulse

―

Test Circuit 1

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